The chemical states of the ZnGeP$_{2}$:Mn interface, which showsferromagnetism above room-temperature, has been studied by photoemissionspectroscopy. Mn deposition on the ZnGeP$_2$ substrate heated to 400$^{\circ}$Cinduced Mn substitution for Zn and then the formation of metallic Mn-Ge-Pcompounds. Depth profile studies have shown that Mn 3$d$ electrons changedtheir character from itinerant to localized along the depth, and in the deepregion, dilute divalent Mn species ($\textless$ 5 % Mn) was observed with acoexisting metallic Fermi edge of non-Mn 3$d$ character. The possibility ofhole doping through Mn substitution for Ge and/or Zn vacancy is discussed.
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机译：ZnGeP $ _ {2} $：Mn界面的化学状态（在室温下显示出铁磁性）已通过光发射光谱法进行了研究。 Mn在ZnGeP $ _2 $衬底上的沉积被加热到400 $ ^ C $ C诱导Mn取代Zn，然后形成金属Mn-Ge-P化合物。深度剖面研究表明，Mn 3 $ d $电子沿深度从其流动性转变为局部电子，并且在深部区域观察到稀有的二价Mn物种（$ textless $ 5％Mn），同时存在非金属的费米边。 Mn 3 $ d $字符。讨论了通过Mn替代Ge和/或Zn空位进行空穴掺杂的可能性。
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